Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

• Tarek A. Ameen,
• Hesameddin Ilatikhameneh,
• Archana Tankasala,
• Yuling Hsueh,
• James Charles,
• Jim Fonseca,
• Michael Povolotskyi,
• Jun Oh Kim,
• Sanjay Krishna,
• Monica S. Allen,
• Jeffery W. Allen,
• Rajib Rahman and
• Gerhard Klimeck

Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99

• in the diameter, but almost insensitive to the changes in dot height. This behavior is explained by a detailed sensitivity analysis of different factors affecting the optical transition energy. Keywords: anharmonic atomistic strain model; biaxial strain ratio; configuration interaction; optical

• tensor components that do not match the analytical solution of the strain in quantum wells as shown in Table 1. The parameters of the model have been tuned to reproduce the biaxial strain ratio σ of InAs in order to capture the strain distribution in quantum wells and quantum dots made from InAs. The

• biaxial strain ratio σ of InAs is 1.053 [23]. Only the parameter α0 has been tuned to 19.35 Nm−1 while keeping the rest of the strain parameters as reported in [7]. Table 1 shows the atomistic strain calculated for InAs/GaAs quantum well, as shown in Figure 4, before and after tuning. The analytical